Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

Shun Wei Tang, Sayeem Bin Kutub, Tian Li Wu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, we have demonstrated the robustness of the forward gate bias time-dependent dielectric breakdown (TDDB) stability in fully recessed gate GaN Metal-Insulator-Semiconductor Field-Effect Transistors (MIS-FETs) with an atomic layer deposited (ALD) Al2O3as a gate dielectric. First, an enhancement-mode (E-mode) characteristic with VTH +1V is demonstrated in a fully recessed gate GaN MIS-FET with a 25-nm ALD Al2O3gate dielectric layer. Second, the low gate leakage is observed and the device shows no gate breakdown till 15V at room temperature. Last, an operating gate voltage of 7V (exponential law) or 8.8V (power law) can be extrapolated while considering 1 % of failures for Wg=36mm at 150°C after 10 years, showing a promising forward gate TDDB stability.

Original languageEnglish
Title of host publication2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728161693
DOIs
StatePublished - 20 Jul 2020
Event2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020 - Singapore, Singapore
Duration: 20 Jul 202023 Jul 2020

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2020-July

Conference

Conference2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2020
CountrySingapore
CitySingapore
Period20/07/2023/07/20

Keywords

  • Al2O3
  • GaN
  • MIS-FETs
  • Recessed gate
  • time dependent dielectric breakdown

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