Robust data retention and superior endurance of silicon-oxide-nitride- oxide-silicon-type nonvolatile memory with NH 3-plasma-treated and pd-nanocrystal-embedded charge storage layer

Sheng Hsien Liu*, Wen Luh Yang, Yu Ping Hsiao, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

In this study, we investigated an ammonia (NH 3) plasma-pretreatment (PT) for suppressing the formation of interface states between metal nanocrystals (NCs) and the surrounding dielectric during the NC forming process with the aim of obtaining a highly reliable Pd NC memory. The discharge-based multipulse (DMP) technique was performed to analyze the distribution of trap energy levels in the Pd NCs/Si 3N 4-stacked storage layer. Through DMP analysis, it is confirmed that the NH 3 PT not only significantly increases the quality of the surrounding dielectric of metal NCs but also effectively passivates shallow trap sites in the Si 3N 4 trapping layer. As compared with the sample without NH 3 PT, the NH 3-plasmatreated device exhibits better reliability characteristics such as excellent charge retention (only 5% charge loss for 104 s retention time) and very high endurance (no memory window narrowing after 105 program/erase cycles). In addition, the robust multilevel cell retention properties of the NH 3-plasma-treated memory are also demonstrated.

Original languageEnglish
Article number04DD05
JournalJapanese journal of applied physics
Volume51
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2012

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