Robust bi-stable memory operation in single-layer graphene ferroelectric memory

Emil B. Song*, Bob Lian, Sung Min Kim, Sejoon Lee, Tien-Kan Chung, Minsheng Wang, Caifu Zeng, Guangyu Xu, Kin Wong, Yi Zhou, Haider I. Rasool, David H. Seo, Hyun Jong Chung, Jinseong Heo, Sunae Seo, Kang L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

124 Scopus citations

Abstract

With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT.

Original languageEnglish
Article number042109
JournalApplied Physics Letters
Volume99
Issue number4
DOIs
StatePublished - 29 Jul 2011

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