Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects

Jae-Joon Kim; Rao Rahul; Mukhopadhyay Saibal; Ching-Te Chuang

Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects

Jae-Joon Kim, Rao Rahul, Mukhopadhyay Saibal, Ching-Te Chuang

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI and the PBTI effects separately while conserving the simplicity and efficiency of a ring oscillator based circuit. We also show that the proposed circuits have better sensitivity to the NBTI effect than conventional ring-oscillator circuit when they are used in technologies that experience negligible PBTI effect.

Original language	English
Title of host publication	IEEE International Conference on Integrated Circuit Design and Technology
Publisher	IEEE
State	Published - 2008

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@inproceedings{5522da3ea0254eab9570b352a9f11eb7,

title = "Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects",

abstract = "Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI and the PBTI effects separately while conserving the simplicity and efficiency of a ring oscillator based circuit. We also show that the proposed circuits have better sensitivity to the NBTI effect than conventional ring-oscillator circuit when they are used in technologies that experience negligible PBTI effect.",

author = "Jae-Joon Kim and Rao Rahul and Mukhopadhyay Saibal and Ching-Te Chuang",

year = "2008",

language = "English",

booktitle = "IEEE International Conference on Integrated Circuit Design and Technology",

publisher = "IEEE",

}

TY - GEN

T1 - Ring oscillator circuit structures for measurement of isolated NBTI/PBTI effects

AU - Kim, Jae-Joon

AU - Rahul, Rao

AU - Saibal, Mukhopadhyay

AU - Chuang, Ching-Te

PY - 2008

Y1 - 2008

N2 - Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI and the PBTI effects separately while conserving the simplicity and efficiency of a ring oscillator based circuit. We also show that the proposed circuits have better sensitivity to the NBTI effect than conventional ring-oscillator circuit when they are used in technologies that experience negligible PBTI effect.

AB - Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI and the PBTI effects separately while conserving the simplicity and efficiency of a ring oscillator based circuit. We also show that the proposed circuits have better sensitivity to the NBTI effect than conventional ring-oscillator circuit when they are used in technologies that experience negligible PBTI effect.

M3 - Conference contribution

BT - IEEE International Conference on Integrated Circuit Design and Technology

PB - IEEE

ER -