Rigorous electromagnetic simulation of mask magnification effects on the diffracted light for EUV binary mask

Chun Hung Lin*, Hsuen Li Chen, Fu-Hsiang Ko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Extreme ultraviolet (EUV) lithography is expected to be the main candidate in the semiconductor manufacturing starting at 32 nm. As the CD is getting smaller, the aspect ratio of the patterns on the EUV mask is becoming larger. The shadowing effect will become much more significant when keeping the same 4× mask magnification. In this work, mask magnification effects on the diffracted light were explored with rigorous coupled-wave analysis (RCWA) for the sub-32 nm node. The simulated binary mask consists of 70-nm TaBN absorber and 2.5-nm Ru capping layer. The dependences of the diffraction efficiencies on mask pitches were calculated. The impacts of the absorber shadowing were observed from the near field distribution on the EUV mask. The aerial images formed by the diffracted light from the 4× and 8× masks were further evaluated.

Original languageEnglish
Pages (from-to)711-715
Number of pages5
JournalMicroelectronic Engineering
Volume84
Issue number5-8
DOIs
StatePublished - 1 May 2007

Keywords

  • Extreme ultraviolet lithography
  • Mask magnification
  • Rigorous coupled-wave analysis

Fingerprint Dive into the research topics of 'Rigorous electromagnetic simulation of mask magnification effects on the diffracted light for EUV binary mask'. Together they form a unique fingerprint.

Cite this