RFIC TaN/SrTiO 3/TaN MIM capacitors with 35 fF/μm 2 capacitance density

C. C. Huang*, K. C. Chiang, H. L. Kao, Albert Chin, W. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A very high density of 35 fF/μm 2 is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-K (κ = 169} SrTiO 3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 × 70 -7 A/cm 2 at 1 V are simultaneously measured. The small voltage dependence of a capacitance AC/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.

Original languageEnglish
Article number1683803
Pages (from-to)493-495
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume16
Issue number9
DOIs
StatePublished - 1 Sep 2006

Keywords

  • Capacitor
  • International Technology Roadmap for Semiconductors (ITRS)
  • Metal-insulator-metal (MIM)
  • Radio frequency integrated circuit (RF IC)
  • SrTiO

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