RF power performance of asymmetric-LDD MOS transistor for RF-CMOS SOC design

Ming Chu King*, Tsu Chang, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This letter presents a new asymmetric-lightly-doped-drain (LDD) metal oxide semiconductor (MOS) transistor that is fully embedded in a CMOS logic without any process modification. The radio frequency (RF) power performance of both conventional and asymmetric MOS transistor is measured and compared. The output power can be improved by 38% at peak power-added efficiency (PAE). The PAE is also improved by 16% at 10-dBm output power and 2.4 GHz. These significant improvements of RF power performance by this new MOS transistor make the RF-CMOS system-on-chip design a step further.

Original languageEnglish
Pages (from-to)445-447
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume17
Issue number6
DOIs
StatePublished - 1 Jun 2007

Keywords

  • Lightly-doped-drain (LDD)
  • Metal oxide semiconductor (MOS) transistor
  • Metal oxide semiconductor field effect transistor (MOSFET)
  • Radio frequency (RF) power transistor

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