RF power FinFET transistors with a wide drain-extended fin

Bo Yuan Chen, Kun Ming Chen, Chia Sung Chiu, Guo Wei Huang, Hsiu Chih Chen, Chun Chi Chen, Fu Kuo Hsueh, Min Cheng Chen, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Drain-extended FinFET transistors for RF power applications have been fabricated and is presented in this paper. Power FinFETs with a wide drain extension are proposed to reduce the drain resistance. Compared with conventional drain-extended FinFETs, our proposed new devices exhibit lower on-resistances and better high-frequency performances while keeping a similar breakdown voltage. The enhancements of the on-resistance and peak cutoff frequency are 16 and 56%, respectively, under an optimal drain-extension layout. These experimental results suggest that FinFET transistors with a wide drain extension could be used for RF power applications, increasing the possibility of integrating RF power parts into future FinFET system-on-a-chip technologies.

Original languageEnglish
Article number04CR09
JournalJapanese Journal of Applied Physics
Volume56
Issue number4
DOIs
StatePublished - 1 Apr 2017

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