RF performance limitation of high-k AlTiOx and Al2O3 gate dielectrics

Albert Chin, S. B. Chen, K. T. Chan, J. C. Hsieh, M. H. Chang, C. C. Lin, J. Liu, K. M. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

In this paper, we have characterized the RF performance of high-k Al2O3 and AlTiOx capacitors and compared with SiO2. We have found that significant k reduction occurs in high-k dielectric and SiO2 at high frequencies and is strong material dependent. This may be a limitation of high-k dielectric. The relatively large shot noise in gate dielectric is strongly dependent on material and sensitive to defect generation after stress.

Original languageEnglish
Title of host publicationExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages62-63
Number of pages2
ISBN (Electronic)4891140216, 9784891140212
DOIs
StatePublished - 1 Jan 2001
EventInternational Workshop on Gate Insulator, IWGI 2001 - Tokyo, Japan
Duration: 1 Nov 20012 Nov 2001

Publication series

NameExtended Abstracts of International Workshop on Gate Insulator, IWGI 2001

Conference

ConferenceInternational Workshop on Gate Insulator, IWGI 2001
CountryJapan
CityTokyo
Period1/11/012/11/01

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    Chin, A., Chen, S. B., Chan, K. T., Hsieh, J. C., Chang, M. H., Lin, C. C., Liu, J., & Chen, K. M. (2001). RF performance limitation of high-k AlTiOx and Al2O3 gate dielectrics. In Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001 (pp. 62-63). [967548] (Extended Abstracts of International Workshop on Gate Insulator, IWGI 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWGI.2001.967548