RF performance improvement of metamorphic high-electron mobility transistor using (InxGa1-xAs)m(InAs)n superlattice-channel structure for millimeter-wave applications

Chien I. Kuo*, Heng-Tung Hsu, Yu Lin Chen, Chien Ying Wu, Edward Yi Chang, Yasuyuki Miyamoto, Wen Chung Tsern, Kartik Chandra Sahoo

*Corresponding author for this work

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