RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic Simulation

Albert Chin*, K. T. Chan, C. H. Huang, C. Chen, V. Liang, J. K. Chen, S. C. Chien, S. W. Sun, D. S. Duh, W. J. Lin, Chunxiang Zhu, M. F. Li, S. P. McAlister, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

39 Scopus citations

Abstract

High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.

Original languageEnglish
Pages (from-to)375-378
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 8 Dec 200310 Dec 2003

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