As scaling down the MOSFET, the ft, keeps increasing but the minimum noise figure (NFmin) is difficult to scale down due to the increasing gate resistance. In this study, the NFmin can be continuously reduced to 0.13 μm technology node (80 nm gate length) by optimizing finger number and channel width. Excellent NFmin of only 0.87 dB is measured with 4 μm finger width and multiple 72 fingers. In addition, high associated gain (22.5 dB), low RF noise (1.0 dB), and low power can be simultaneously achieved in 0.13 μm node MOSFETs using only 6 fingers that is impossible in 0.18 μm case. We have also predicted the future scaling trend of RF noise beyond 0.13 μm node from measured data and well calibrated Fukul's equation.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 20 Sep 2004|
|Event||2004 IEEE MITT-S International Microwave Symposium Digest - Fort Worth, TX, United States|
Duration: 6 Jun 2004 → 11 Jun 2004
- Associated gain
- Scaling trend