RF noise in 1.5 nm gate oxide MOSFETs and the evaluation of the NMOS LNA circuit integrated on a chip

Hisayo Sasaki Momose*, Ryuichi Fujimoto, Shoji Otaka, Eiji Morifuji, Tatsuya Ohguro, Takashi Yoshitomi, Hideki Kimijima, Shin ichi Nakamura, Toyota Morimoto, Yasuhiro Katsumata, Hiroshi Tanimoto, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

Radio frequency (RF) noise characteristics of 1.5 nm gate oxide MOSFETs have been investigated. It was confirmed that noise figure and associated gain improve with reduction in the gate oxide thickness down to 1.5 nm. Low noise amplifier (LNA) circuit composed of 1.5 nm gate oxide nMOSFETs and passive elements integrated on a chip has been evaluated for the first time. Excellent RF operation of LNA circuit with Ga of 19.8 dB and NF50 of 1.6 dB were confirmed. tunneling gate oxide MOSFETs have a high potential to realize extremely high performance of RF analog circuit.

Original languageEnglish
Pages (from-to)96-97
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
DOIs
StatePublished - 9 Jun 1998
EventProceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 9 Jun 199811 Jun 1998

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