Radio frequency (RF) noise characteristics of 1.5 nm gate oxide MOSFETs have been investigated. It was confirmed that noise figure and associated gain improve with reduction in the gate oxide thickness down to 1.5 nm. Low noise amplifier (LNA) circuit composed of 1.5 nm gate oxide nMOSFETs and passive elements integrated on a chip has been evaluated for the first time. Excellent RF operation of LNA circuit with Ga of 19.8 dB and NF50 of 1.6 dB were confirmed. tunneling gate oxide MOSFETs have a high potential to realize extremely high performance of RF analog circuit.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 9 Jun 1998|
|Event||Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 9 Jun 1998 → 11 Jun 1998