Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 1 Jan 2002|
|Event||2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States|
Duration: 2 Jun 2002 → 7 Jun 2002