RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

S. B. Chen; C. H. Lai; Albert Chin; J. C. Hsieh; J. Liu

doi:10.1109/MWSYM.2002.1011593

RF MIM capacitors using high-K Al₂O₃ and AlTiO_x dielectrics

S. B. Chen, C. H. Lai, Albert Chin, J. C. Hsieh^*, J. Liu

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

17 Scopus citations

Abstract

Record high capacitance density of 0.5 and 1.0 μF/cm² are obtained for Al₂O₃ and AlTiO_x MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiO_x MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al₂O₃ MIM capacitor has good device integrity of low leakage current of 4.3×10^-8 A/cm², small frequency-dependent capacitance reduction, and good reliability.

Original language	English
Pages (from-to)	201-204
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
DOIs	https://doi.org/10.1109/MWSYM.2002.1011593
State	Published - 1 Jan 2002
Event	2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States Duration: 2 Jun 2002 → 7 Jun 2002

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title = "RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics",

abstract = "Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.",

author = "Chen, {S. B.} and Lai, {C. H.} and Albert Chin and Hsieh, {J. C.} and J. Liu",

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TY - JOUR

T1 - RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

AU - Chen, S. B.

AU - Lai, C. H.

AU - Chin, Albert

AU - Hsieh, J. C.

AU - Liu, J.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.

AB - Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.

UR - http://www.scopus.com/inward/record.url?scp=0036073714&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2002.1011593

DO - 10.1109/MWSYM.2002.1011593

M3 - Conference article

AN - SCOPUS:0036073714

VL - 1

SP - 201

EP - 204

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

Y2 - 2 June 2002 through 7 June 2002

ER -

RF MIM capacitors using high-K Al₂O₃ and AlTiO_x dielectrics

Abstract

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