RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

S. B. Chen, C. H. Lai, Albert Chin, J. C. Hsieh*, J. Liu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

Record high capacitance density of 0.5 and 1.0 μF/cm2 are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MIM capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MIM capacitor has good device integrity of low leakage current of 4.3×10-8 A/cm2, small frequency-dependent capacitance reduction, and good reliability.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
DOIs
StatePublished - 1 Jan 2002
Event2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: 2 Jun 20027 Jun 2002

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