RF loss and cross talk on extremely high resistivity (10K-1MΩ-CM) Si fabricated by ion implantation

Y. H. Wu; Albert Chin; K. H. Shih; C. C. Wu; C. P. Liao; S. C. Pai; C. C. Chi

doi:10.1109/MWSYM.2000.860951

RF loss and cross talk on extremely high resistivity (10K-1MΩ-CM) Si fabricated by ion implantation

Y. H. Wu^*, Albert Chin, K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai, C. C. Chi

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

47 Scopus citations

Abstract

We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10μm gap) at 20GHz are measured with 1μm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.

Original language	English
Pages (from-to)	221-224
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
DOIs	https://doi.org/10.1109/MWSYM.2000.860951
State	Published - 11 Dec 2000
Event	Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA Duration: 11 Jun 2000 → 16 Jun 2000

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title = "RF loss and cross talk on extremely high resistivity (10K-1MΩ-CM) Si fabricated by ion implantation",

abstract = "We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10μm gap) at 20GHz are measured with 1μm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.",

author = "Wu, {Y. H.} and Albert Chin and Shih, {K. H.} and Wu, {C. C.} and Liao, {C. P.} and Pai, {S. C.} and Chi, {C. C.}",

year = "2000",

month = dec,

day = "11",

doi = "10.1109/MWSYM.2000.860951",

language = "English",

volume = "1",

pages = "221--224",

journal = "IEEE MTT-S International Microwave Symposium Digest",

issn = "0149-645X",

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note = "null ; Conference date: 11-06-2000 Through 16-06-2000",

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TY - JOUR

T1 - RF loss and cross talk on extremely high resistivity (10K-1MΩ-CM) Si fabricated by ion implantation

AU - Wu, Y. H.

AU - Chin, Albert

AU - Shih, K. H.

AU - Wu, C. C.

AU - Liao, C. P.

AU - Pai, S. C.

AU - Chi, C. C.

PY - 2000/12/11

Y1 - 2000/12/11

N2 - We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10μm gap) at 20GHz are measured with 1μm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.

AB - We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10μm gap) at 20GHz are measured with 1μm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.

UR - http://www.scopus.com/inward/record.url?scp=0033708950&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2000.860951

DO - 10.1109/MWSYM.2000.860951

M3 - Conference article

AN - SCOPUS:0033708950

VL - 1

SP - 221

EP - 224

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

Y2 - 11 June 2000 through 16 June 2000

ER -

RF loss and cross talk on extremely high resistivity (10K-1MΩ-CM) Si fabricated by ion implantation

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