RF loss and cross talk on extremely high resistivity (10K-1MΩ-CM) Si fabricated by ion implantation

Y. H. Wu*, Albert Chin, K. H. Shih, C. C. Wu, C. P. Liao, S. C. Pai, C. C. Chi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

47 Scopus citations

Abstract

We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10μm gap) at 20GHz are measured with 1μm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
DOIs
StatePublished - 11 Dec 2000
EventProceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA
Duration: 11 Jun 200016 Jun 2000

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