We have achieved 1.6MΩ-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10μm gap) at 20GHz are measured with 1μm Al, respectively, which is due to implant induced trap with approx. 1ps carrier lifetime and stable to 400°C.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 11 Dec 2000|
|Event||Proceedings of the 1999 IEEE MTT-S International Microwave Symposium - Boston, MA, USA|
Duration: 11 Jun 2000 → 16 Jun 2000