RF-interconnect for multi-Gb/s digital interface based on 10-GHz RF-modulation in 0.18μm CMOS

Hyunchol Shin*, Zhiwei Xu, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.

Original languageEnglish
Pages (from-to)477-480
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
DOIs
StatePublished - 1 Jan 2002
Event2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
Duration: 2 Jun 20027 Jun 2002

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