We present a RF-interconnect (RFI) for multi-Gb/s digital interface based on capacitive coupling and RF-modulation over an impedance-matched transmission line. The RFI can reduce the switching noise coupling greatly and eliminate the dc current dissipation completely over the channel. The improved signal-to-noise ratio enables data transmission with reduced signal swing (as low as 0.2V) and potentially enhanced data speed. A prototype RFI implemented in 0.18μm CMOS demonstrates a maximum data rate of 2.2 Gb/s with 10.5-GHz RF-carrier.
|Number of pages||4|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - 1 Jan 2002|
|Event||2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States|
Duration: 2 Jun 2002 → 7 Jun 2002