RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

Sheng Chun Wang*, Pin Su, Kun Ming Chen, Chien Ting Lin, Victor Liang, Guo Wei Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages139-140
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 24 Apr 200626 Apr 2006

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period24/04/0626/04/06

Cite this

Wang, S. C., Su, P., Chen, K. M., Lin, C. T., Liang, V., & Huang, G. W. (2006). RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 139-140). [4016638] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251102