RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Shi Jin Ding*, Hang Hu, Chunxiang Zhu, Sun Jung Kim, Xiongfei Yu, Ming Fu Li, Byung Jin Cho, Daniel S.H. Chan, M. B. Yu, Subhash C. Rustagi, Albert Chin, Dim Lee Kwong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations

Abstract

High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/μm2) up to 20 GHz, low leakage current of 4.9 × 10-8 A/cm2 at 2 V and 125°C, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (α) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.

Original languageEnglish
Pages (from-to)886-894
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume51
Issue number6
DOIs
StatePublished - 1 Jun 2004

Keywords

  • Atomic layer-deposit (ALD)
  • HfO-AlO laminate
  • Metal-insulator-metal (MIM) capacitor
  • Radio frequency (RF)
  • Reliability

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