RF CMOS technology

Hiroshi Iwai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

RF CMOS characteristics have been traditionally regarded as poorer than those of Si-bipolar and compound devices. However, recent aggressive downsizing of CMOS devices has improved its RF characteristics significantly and some of them have already exceeded some of Si-bipolar and GaAs transistors. In near future. RF front-end and base band chips could merge into one chip. In this paper, current status and future prospects of advanced RF CMOS technology are described, especially with comparison to SiGe BiCMOS RF technologies.

Original languageEnglish
Title of host publication2004 Asia-Pacific Radio Science Conference - Proceedings
EditorsT. Keyun, L. Dayong
Pages296-298
Number of pages3
StatePublished - 2004
Event2004 Asia-Pacific Radio Science Conference - Qingdao, China
Duration: 24 Aug 200427 Aug 2004

Publication series

Name2004 Asia-Pacific Radio Science Conference - Proceedings

Conference

Conference2004 Asia-Pacific Radio Science Conference
CountryChina
CityQingdao
Period24/08/0427/08/04

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