RF characteristics of BJT devices with selectively or fully ion-implanted collector

Chin-Chun Meng*, J. Y. Su, B. C. Tsou, G. W. Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A selectively ion-implanted collector (SIC) is implemented in a 0.8 um BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better ft and fmax than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The fmax is 9.5GHz and ft is 7.8 GHz for the SIC BJT device while the fmax is 7.2 GHz and fmax is 4.5 GHz for the FIC BJT device when biased at Vce=3.6 V and Jc=0.09 mA/um2. The nois parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.

Original languageEnglish
Title of host publicationGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Pages161-164
Number of pages4
StatePublished - 1 Dec 2005
EventGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
Duration: 3 Oct 20054 Oct 2005

Publication series

NameGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Volume2005

Conference

ConferenceGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period3/10/054/10/05

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