RF characteristics of AlGaN/GaN HEMTs under different temperatures

Yu Sheng Chiu*, Jui Chien Huang, Tai Ming Lin, Yu Ting Chou, Chung Yu Lu, Chia Ta Chang, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We present the Rf characteristics of 0.7-μm gate length n-GaN/AlGaN/GaN high-electron mobility transistors (HEMTs) with different source-drain spacing tested under different temperatures. The 7-μm source-drain spacing device demonstrated 800 mA/mm drain current density and 257 mS/mm tranceconductance, and the 5-μm source-drain spacing device demonstrated 700 mA/mm drain current density and 260 mS/mm tranconductance. The 7-μm source-drain spacing device was measured at room temperatures of 25 °C and -40 °C, the current gain (fT) were 18 GHz and 21GHz and the maximum oscillation (f max(U)) frequency were 63 GHz-and 87 GHz, respectively The f T was nearly linearly dependent on the temperature. As operating temperature increased from -40 °C to 50 °C, the fT dropped more dramatically for the 5-μm SD spacing device than for the 7-μm device. The fmax characteristic of 5-μm SD spacing device decreases more dramatically above 125 °C than the 7-μm SD spacing device. This phenomenon might be due to stronger phonon scattering for shorter channel device at high temperatures.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages411-413
Number of pages3
DOIs
StatePublished - 1 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

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