Rewritable ferroelectric vortex pairs in BiFeO 3

Yang Li, Yaming Jin, Xiaomei Lu*, Jan Chi Yang, Ying-hao Chu, Fengzhen Huang, Jinsong Zhu, Sang Wook Cheong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Scopus citations

Abstract

Ferroelectric vortex in multiferroic materials has been considered as a promising alternative to current memory cells for the merit of high storage density. However, the formation of regular natural ferroelectric vortex is difficult, restricting the achievement of vortex memory device. Here, we demonstrated the creation of ferroelectric vortex-antivortex pairs in BiFeO 3 thin films by using local electric field. The evolution of the polar vortex structure is studied by piezoresponse force microscopy at nanoscale. The results reveal that the patterns and stability of vortex structures are sensitive to the poling position. Consecutive writing and erasing processes cause no influence on the original domain configuration. The Z4 proper coloring vortex-antivortex network is then analyzed by graph theory, which verifies the rationality of artificial vortex-antivortex pairs. This study paves a foundation for artificial regulation of vortex, which provides a possible pathway for the design and realization of non-volatile vortex memory devices and logical devices.

Original languageEnglish
Article number47
Journalnpj Quantum Materials
Volume2
Issue number1
DOIs
StatePublished - 1 Dec 2017

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