The progress of RF power devices based on compound semiconductor materials are reviewed. Two major application of those devices are the handy terminals and the base stations. The highest power-added-efficiency is the major concern for the mobile terminals, while the latter one requires the high power transmitting capability with sufficient linearity. Compound semiconductor devices are suited for those applications. The present paper reviews the recent developments of those RF power devices.
|Number of pages||8|
|State||Published - 1 Jan 2002|
|Event||14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States|
Duration: 4 Jun 2002 → 7 Jun 2002
|Conference||14th International Symposium on Power Semiconductor Devices and IC's 2002|
|City||Santa Fe, NM|
|Period||4/06/02 → 7/06/02|