Review of compound semiconductor devices for RF power applications

Daisuke Ueda*

*Corresponding author for this work

Research output: Contribution to conferencePaper

1 Scopus citations

Abstract

The progress of RF power devices based on compound semiconductor materials are reviewed. Two major application of those devices are the handy terminals and the base stations. The highest power-added-efficiency is the major concern for the mobile terminals, while the latter one requires the high power transmitting capability with sufficient linearity. Compound semiconductor devices are suited for those applications. The present paper reviews the recent developments of those RF power devices.

Original languageEnglish
Pages17-24
Number of pages8
StatePublished - 1 Jan 2002
Event14th International Symposium on Power Semiconductor Devices and IC's 2002 - Santa Fe, NM, United States
Duration: 4 Jun 20027 Jun 2002

Conference

Conference14th International Symposium on Power Semiconductor Devices and IC's 2002
CountryUnited States
CitySanta Fe, NM
Period4/06/027/06/02

Fingerprint Dive into the research topics of 'Review of compound semiconductor devices for RF power applications'. Together they form a unique fingerprint.

  • Cite this

    Ueda, D. (2002). Review of compound semiconductor devices for RF power applications. 17-24. Paper presented at 14th International Symposium on Power Semiconductor Devices and IC's 2002, Santa Fe, NM, United States.