Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO2

Wun Cheng Luo, Tuo-Hung Hou*, Kuan Liang Lin, Yao Jen Lee, Tan Fu Lei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

In contrast to the irreversible transition of resistive switching induced by oxygen-vacancy filaments (VF) and metal filaments (MF) reported in the literature, this study reports coexistence and completely reversible transition of VF- and MF-induced resistive switching in a Ni/HfO2/SiO x/p+-Si device with three distinct and stable resistance states. In a dual filament model proposed, VF and MF may coexist at the same percolation path, and the formation and rupture proceed in a two-step fashion by choosing appropriate SET/RESET conditions. Exploiting the dependence of different filament compositions on resistive switching may enable new design space for future multi-level-cell resistive-switching memory.

Original languageEnglish
Pages (from-to)167-170
Number of pages4
JournalSolid-State Electronics
Volume89
DOIs
StatePublished - Nov 2013

Keywords

  • Filament
  • Multi-level-cell
  • Resistive switching
  • RRAM

Fingerprint Dive into the research topics of 'Reversible transition of resistive switching induced by oxygen-vacancy and metal filaments in HfO<sub>2</sub>'. Together they form a unique fingerprint.

Cite this