Reverse short-channel effects & channel-engineering in deep-submicron MOSFET's: modeling and optimization

Bin Yu*, Ed Nowak, Kenji Noda, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations


For the first time, a theoretical model is presented, taking into account all the physical effects of T OX , X j , N sub , V BS , and channel engineering PTS scheme, to predict the Reverse-Short-Channel Effect (RSCE) in deep-submicron devices of several technology generations. The Δ V th is found to follow the superposition principle. The worst case L min is also modeled and its ultimate lower bound is exploited via optimum channel engineering.

Original languageEnglish
Article number5436107
Pages (from-to)162-163
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Jan 1996
EventProceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA
Duration: 11 Jun 199613 Jun 1996

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