For the first time, a theoretical model is presented, taking into account all the physical effects of T OX , X j , N sub , V BS , and channel engineering PTS scheme, to predict the Reverse-Short-Channel Effect (RSCE) in deep-submicron devices of several technology generations. The Δ V th is found to follow the superposition principle. The worst case L min is also modeled and its ultimate lower bound is exploited via optimum channel engineering.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Jan 1996|
|Event||Proceedings of the 1996 Symposium on VLSI Technology - Honolulu, HI, USA|
Duration: 11 Jun 1996 → 13 Jun 1996