Reverse current of plasma doped p+/n ultra-shallow junction

H. Sauddin*, H. Tamura, K. Okashita, Y. Sasaki, H. Ito, B. Mizuno, K. Kakushima, K. Tsutsui, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations
Original languageEnglish
Title of host publicationExtended Abstracts of the Fifth International Workshop on Junction Technology, 2005
Pages75-78
Number of pages4
StatePublished - 2005
Event5th International Workshop on Junction Technology, 2005 - Osaka, Japan
Duration: 7 Jun 20058 Jun 2005

Publication series

NameExtended Abstracts of the Fifth International Workshop on Junction Technology, 2005
Volume2005

Conference

Conference5th International Workshop on Junction Technology, 2005
CountryJapan
CityOsaka
Period7/06/058/06/05

Cite this

Sauddin, H., Tamura, H., Okashita, K., Sasaki, Y., Ito, H., Mizuno, B., Kakushima, K., Tsutsui, K., & Iwai, H. (2005). Reverse current of plasma doped p+/n ultra-shallow junction. In Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005 (pp. 75-78). [1598674] (Extended Abstracts of the Fifth International Workshop on Junction Technology, 2005; Vol. 2005).