Reverse-bias electroluminescence observation for reliability investigations of the InGaN LED

Hsiang Chen*, Tien-Chang Lu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The reverse-bias operation of the InGaN LED device can shed a light on device reliability problems. Our goal is to use noninvasive optical characterization techniques including surface temperature measurements, 2D XRF (X-ray fluorescent) element analysis, and 2D electroluminescence measurements to visualize the leakage current distribution and examine the origin of the reverse-bias leakage current. The origin of the reverse-bias emission is attributed to imperfect metal contact caused by process variation. Hot electron induced emission due to the leakage current should be the mechanism of the reverse-bias emission from the surface defect and the imperfect contact. The light emission was proved to be relevant to reliability problems in terms of the leakage current.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2010, CSTIC 2010
Pages237-242
Number of pages6
Edition1
DOIs
StatePublished - 1 Dec 2010
EventChina Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China
Duration: 18 Mar 201019 Mar 2010

Publication series

NameECS Transactions
Number1
Volume27
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2010, CSTIC 2010
CountryChina
CityShanghai
Period18/03/1019/03/10

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