Response surface methodology applied to silicon trench etching in Cl2/HBr/O2 using transformer coupled plasma technique

C. C. Hung, Horng-Chih Lin, H. C. Shih*

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

The response surface methodology (RSM) has been used in this study to investigate the effect of various control factors on the performance of silicon trench etch in high-density transformer coupled plasma (TCP) on Cl2/HBr/O2-based chemistry. The TCP source power, bias power, and Cl2 content of the Cl2/HBr mixture were the process variables. The etch rate and sidewall profile angle were employed as the response items for RSM analysis. Quantitative relationships between etching characteristics and process parameters have been established. The possible mechanisms are also proposed to explain the different sidewall profile angles as varying the parameters.

Original languageEnglish
Pages (from-to)791-795
Number of pages5
JournalSolid-State Electronics
Volume46
Issue number6
DOIs
StatePublished - 1 Jun 2002

Keywords

  • Etch rate
  • Plasma etching
  • Profile angle
  • Response surface methodology
  • Transformer coupled plasma
  • Trench etch

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