Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors

B. Aslan; H. C. Liu; M. Korkusinski; Shun-Jen Cheng; P. Hawrylak

doi:10.1063/1.1540728

Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors

B. Aslan^*, H. C. Liu, M. Korkusinski, Shun-Jen Cheng, P. Hawrylak

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Spectral photoresponse curves, of InAs/GaAs self-assembled quantum-dot infrared photodetectors with various doping levels, were reported. Devices were illuminated through the 45° polished edge facets and data were taken with two sets of beamsplitters and windows. Polarization behaviors of transitions and effects of the number of electrons on the photoresponse spectra were demonstrated. A strong in-plane polarized, bound-to-bound transition feature was observed.

Original language	English
Pages (from-to)	630-632
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1540728
State	Published - 27 Jan 2003

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abstract = "Spectral photoresponse curves, of InAs/GaAs self-assembled quantum-dot infrared photodetectors with various doping levels, were reported. Devices were illuminated through the 45° polished edge facets and data were taken with two sets of beamsplitters and windows. Polarization behaviors of transitions and effects of the number of electrons on the photoresponse spectra were demonstrated. A strong in-plane polarized, bound-to-bound transition feature was observed.",

author = "B. Aslan and Liu, {H. C.} and M. Korkusinski and Shun-Jen Cheng and P. Hawrylak",

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AU - Aslan, B.

AU - Liu, H. C.

AU - Korkusinski, M.

AU - Cheng, Shun-Jen

AU - Hawrylak, P.

PY - 2003/1/27

Y1 - 2003/1/27

N2 - Spectral photoresponse curves, of InAs/GaAs self-assembled quantum-dot infrared photodetectors with various doping levels, were reported. Devices were illuminated through the 45° polished edge facets and data were taken with two sets of beamsplitters and windows. Polarization behaviors of transitions and effects of the number of electrons on the photoresponse spectra were demonstrated. A strong in-plane polarized, bound-to-bound transition feature was observed.

AB - Spectral photoresponse curves, of InAs/GaAs self-assembled quantum-dot infrared photodetectors with various doping levels, were reported. Devices were illuminated through the 45° polished edge facets and data were taken with two sets of beamsplitters and windows. Polarization behaviors of transitions and effects of the number of electrons on the photoresponse spectra were demonstrated. A strong in-plane polarized, bound-to-bound transition feature was observed.

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M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -

Response spectra from mid- to far-infrared, polarization behaviors, and effects of electron numbers in quantum-dot photodetectors

Abstract

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