Resonant tunnel magnetoresistance in a double magnetic tunnel junction

Artur Useinov, N. K. Useinov*, L. R. Tagirov, J. Kosel

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We present quasi-classical approach to calculate a spin-dependent current and tunnel magnetoresistance (TMR) in double magnetic tunnel junctions (DMTJ) FML/I/FMW/I/FMR, where the magnetization of the middle ferromagnetic metal layer FMW can be aligned parallel or antiparallel with respect to the fixed magnetizations of the left FML and right FMR ferromagnetic electrodes. The transmission coefficients for components of the spin-dependent current, and TMR are calculated as a function of the applied voltage. As a result, we found a high resonant TMR. Thus, DMTJ can serve as highly effective magnetic nanosensor for biological applications, or as magnetic memory cells by switching the magnetization of the inner ferromagnetic layer FMW.

Original languageEnglish
Pages (from-to)2573-2576
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume25
Issue number8
DOIs
StatePublished - 1 Dec 2012

Keywords

  • Magnetic tunnel junction
  • Spin-dependent current
  • TMR
  • Tunnel magnetoresistance

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