Resolving the mechanisms of current gain increase under forward current stress in poly emitter n-p-n transistors

J. Zhao*, G. P. Li, K. Y. Liao, Maw Rong Chin, Jack Y.C. Sun, A. La Duca

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

The mechanisms behind moderate bias current gain (β) increase of n-p-n transistors under forward current stress are investigated in polysilicon emitter transistors processed with different dopant impurities and concentrations, and with different amounts of hydrogen plasma treatment. The results suggest that transport of atomic hydrogen toward poly/monosilicon interface region and its subsequent passivation of dangling bonds at both poly grain boundaries and poly/monosilicon interface are responsible for the moderate bias β increase. To alleviate the β instability, elimination of hydrogen involvement and/or a higher doping concentration inside poly emitter in back-end-of-line (BEOL) processes are/is recommended.

Original languageEnglish
Pages (from-to)252-255
Number of pages4
JournalIEEE Electron Device Letters
Volume14
Issue number5
DOIs
StatePublished - May 1993

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