Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation

J. Song, K. Matsumoto, K. Kakushima, Y. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, K. Natori, H. Iwai

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Ni silicide nanowires have been formed by 2-step annealing process (2-step RTA) as SALICIDE process. All nanowires with width range from 20 to 90 nm are measured their electronic characteristic and revealed drastic increase of resistivity in less than 40 nm area. In this study, a low resistivity was obtained for a little more than 50μΩcm by controlling Ni film thickness and investigated its reason.

Original languageEnglish
Pages (from-to)87-91
Number of pages5
JournalECS Transactions
Volume58
Issue number7
DOIs
StatePublished - 2013

Fingerprint Dive into the research topics of 'Resistivity of Ni silicide nanowires and its dependence on Ni film thickness used for the formation'. Together they form a unique fingerprint.

Cite this