Resistive switching properties of SrZrO3-based memory films

Chun Chieh Lin, Chao Cheng Lin, Bing Chung Tu, Jung Sheng Yu, Chen Hsi Lin, Tseung-Yuen Tseng

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The resistive switching properties of the sputter-deposited SrZrO 3 (SZO) memory films were investigated in this study. The resistive switching behaviors of the SZO film can be improved by doping with vanadium oxide. The conduction mechanisms of the high and low current states of the 0.3% V-doped SZO (V:SZO) film are ohmic conduction and Frenkel-Poole emission, respectively, which implies the bulk effect of the memory film. The resistive ratio of two current states of the 0.3% V:SZO film remains 1000 times after applying 100 voltage sweeping cycles. Furthermore, the 0.3% V:SZO film shows stable resistive switching properties when measurement is performed at 100°C. The band modulation of the SZO/LNO interface is proposed to explain the forming process of the SZO films. The 0.3% V:SZO memory film has excellent properties, such as high stability, good endurance, and long retention time, which make it a good candidate for next-generation nonvolatile memory application.

Original languageEnglish
Pages (from-to)2153-2156
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
StatePublished - 24 Apr 2007

Keywords

  • Conduction mechanism
  • Dopant
  • Forming process
  • Nonvolatile memory
  • Resistive random access memory (RRAM)
  • Resistive switching
  • SrZrO
  • Vanadium oxide

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