Resistive switching properties of sol-gel derived Mo-doped SrZrO 3 thin films

Chih Yang Lin; Chun Chieh Lin; Chun Hsing Huang; Chen Hsi Lin; Tseung-Yuen Tseng

doi:10.1016/j.surfcoat.2007.07.052

Resistive switching properties of sol-gel derived Mo-doped SrZrO ₃ thin films

Chih Yang Lin, Chun Chieh Lin, Chun Hsing Huang, Chen Hsi Lin, Tseung-Yuen Tseng^*

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Hysteretic I-V characteristics of the SrZrO ₃ (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 ⁴ s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.

Original language	English
Pages (from-to)	1319-1322
Number of pages	4
Journal	Surface and Coatings Technology
Volume	202
Issue number	4-7
DOIs	https://doi.org/10.1016/j.surfcoat.2007.07.052
State	Published - 15 Dec 2007

Keywords

Nonvolatile memory
Resistive switching
Sol-gel
SrZrO

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title = "Resistive switching properties of sol-gel derived Mo-doped SrZrO 3 thin films",

abstract = " Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 4 s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.",

keywords = "Nonvolatile memory, Resistive switching, Sol-gel, SrZrO",

author = "Lin, {Chih Yang} and Lin, {Chun Chieh} and Huang, {Chun Hsing} and Lin, {Chen Hsi} and Tseung-Yuen Tseng",

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AU - Lin, Chih Yang

AU - Lin, Chun Chieh

AU - Huang, Chun Hsing

AU - Lin, Chen Hsi

AU - Tseng, Tseung-Yuen

PY - 2007/12/15

Y1 - 2007/12/15

N2 - Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 4 s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.

AB - Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 4 s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.

KW - Nonvolatile memory

KW - Resistive switching

KW - Sol-gel

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