Resistive switching properties of sol-gel derived Mo-doped SrZrO 3 thin films

Chih Yang Lin, Chun Chieh Lin, Chun Hsing Huang, Chen Hsi Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Hysteretic I-V characteristics of the SrZrO 3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10 4  s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application.

Original languageEnglish
Pages (from-to)1319-1322
Number of pages4
JournalSurface and Coatings Technology
Volume202
Issue number4-7
DOIs
StatePublished - 15 Dec 2007

Keywords

  • Nonvolatile memory
  • Resistive switching
  • Sol-gel
  • SrZrO

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