Resistive Switching Non-volatile Memory Feasible for 28nm and beyond Embedded Logic CMOS Technology

Steve S. Chung*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Current bottleneck to the development of advanced 28nm and beyond nonvolatile memory is limited by the further scaling of existing flash memory, e.g., floating gate and SONOS, as a result of the scaling limit of the tunnel oxide as well as the retention issue. On the other hand, there is a strong demand to develop a memory cell which is compatible with the advanced logic HKMG CMOS generations for the embedded applications. In this talk, we will provide a solution on how to develop a replacement of FG and SONOS memories based on the resistive switching. This switching nonvolatile memory, named 1T NVM, comprises a simple MIM structure on the top of the transistor gate while the readout is taken from the transistor V th or I d , similar to that of flash memory. A bilayer MIM is preferable for quality performance. Experimental results demonstrated that this memory exhibits good endurance, retention, and can solve the sneak path, forming issues in conventional crossbar ReRAM. The architecture of this basic NVM is especially useful for the embedded design in high-k metal-gate logic CMOS with 28nm and beyond. It has great potential for both NOR and NAND memory applications.

Original languageEnglish
Title of host publication2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
EditorsTing-Ao Tang, Fan Ye, Yu-Long Jiang
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538644409
DOIs
StatePublished - 5 Dec 2018
Event14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Qingdao, China
Duration: 31 Oct 20183 Nov 2018

Publication series

Name2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings

Conference

Conference14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
CountryChina
CityQingdao
Period31/10/183/11/18

Fingerprint Dive into the research topics of 'Resistive Switching Non-volatile Memory Feasible for 28nm and beyond Embedded Logic CMOS Technology'. Together they form a unique fingerprint.

Cite this