We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Jan 2012|
|Event||49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States|
Duration: 3 Jun 2012 → 8 Jun 2012
- Flexible electronic
- Resistive switching