Resistive switching memory device based on amorphous al-zn-sn-o film for flexible electronics application

Yang Shun Fan, Po Tsun Liu*, Ching Hui Hsu, Hsuan Ying Lai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

We have fabricated flexible resistive switching memory (RRAM) using Al-doped zinc tin oxide (AZTO) as resistive switching layers. The AZTO RRAM with robust memory window over hundreds of switching cycles. Besides, a conceptual co-operation scheme was also demonstrated between AZTO RRAM and thin film transistor (TFT) for flexible electronics application.

Original languageEnglish
Pages (from-to)1340-1342
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume43
Issue number1
DOIs
StatePublished - 1 Jan 2012
Event49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
Duration: 3 Jun 20128 Jun 2012

Keywords

  • AZTO
  • Flexible electronic
  • Resistive switching
  • RRAM

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