Resistive switching mechanisms of V-doped SrZrO3 memory films

Chun Chieh Lin, Bing Chung Tu, Chao Cheng Lin, Chen Hsi Lin, Tseung-Yuen Tseng

Research output: Contribution to journalArticle

82 Scopus citations

Abstract

The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.

Original languageEnglish
Pages (from-to)725-727
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number9
DOIs
StatePublished - 1 Sep 2006

Keywords

  • Conduction mechanism
  • Nonvolatile memory (NVM)
  • Resistive random access memory (RRAM)
  • Resistive switching
  • SrZrO

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