Resistive switching mechanisms of V-doped SrZrO3 memory films

Chun Chieh Lin; Bing Chung Tu; Chao Cheng Lin; Chen Hsi Lin; Tseung-Yuen Tseng

doi:10.1109/LED.2006.880660

Resistive switching mechanisms of V-doped SrZrO₃ memory films

Chun Chieh Lin, Bing Chung Tu, Chao Cheng Lin, Chen Hsi Lin, Tseung-Yuen Tseng

National Chiao Tung University

Research output: Contribution to journal › Article

82 Scopus citations

Abstract

The resistive switching behaviors of sputtered V-doped SrZrO₃ (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO₃ oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.

Original language	English
Pages (from-to)	725-727
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	27
Issue number	9
DOIs	https://doi.org/10.1109/LED.2006.880660
State	Published - 1 Sep 2006

Keywords

Conduction mechanism
Nonvolatile memory (NVM)
Resistive random access memory (RRAM)
Resistive switching
SrZrO

Access to Document

10.1109/LED.2006.880660

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Resistive switching mechanisms of V-doped SrZrO<sub>3</sub> memory films'. Together they form a unique fingerprint.

Cite this

Lin, C. C., Tu, B. C., Lin, C. C., Lin, C. H., & Tseng, T-Y. (2006). Resistive switching mechanisms of V-doped SrZrO₃ memory films. IEEE Electron Device Letters, 27(9), 725-727. https://doi.org/10.1109/LED.2006.880660

@article{569c15db3ca64354856acf05981dab72,

title = "Resistive switching mechanisms of V-doped SrZrO3 memory films",

abstract = "The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.",

keywords = "Conduction mechanism, Nonvolatile memory (NVM), Resistive random access memory (RRAM), Resistive switching, SrZrO",

author = "Lin, {Chun Chieh} and Tu, {Bing Chung} and Lin, {Chao Cheng} and Lin, {Chen Hsi} and Tseung-Yuen Tseng",

year = "2006",

month = sep,

day = "1",

doi = "10.1109/LED.2006.880660",

language = "English",

volume = "27",

pages = "725--727",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Resistive switching mechanisms of V-doped SrZrO3 memory films

AU - Lin, Chun Chieh

AU - Tu, Bing Chung

AU - Lin, Chao Cheng

AU - Lin, Chen Hsi

AU - Tseng, Tseung-Yuen

PY - 2006/9/1

Y1 - 2006/9/1

N2 - The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.

AB - The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.

KW - Conduction mechanism

KW - Nonvolatile memory (NVM)

KW - Resistive random access memory (RRAM)

KW - Resistive switching

KW - SrZrO

UR - http://www.scopus.com/inward/record.url?scp=33748484256&partnerID=8YFLogxK

U2 - 10.1109/LED.2006.880660

DO - 10.1109/LED.2006.880660

M3 - Article

AN - SCOPUS:33748484256

VL - 27

SP - 725

EP - 727

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -