Resistive Switching Characteristics of WO3/ZrO2 Structure with Forming-Free, Self-Compliance, and Submicroampere Current Operation

Tsung Ling Tsai, Yu Hsuan Lin, Tseung Yuen Tseng

Research output: Contribution to journalArticlepeer-review

19 Scopus citations


The homogeneous switching of Ti/WO3/ZrO2/W resistive switching memory devices with stable resistive switching, forming-free, self-compliance, and multilevel operation characteristics are demonstrated. The area dependence of current at the low resistance and high resistance states confirms that the switching mechanisms of the devices are homogeneous conduction. The devices exhibit the stable bipolar resistive switching behavior with a low operating current ( < 10^{-6} A) by inserting the WO3 layer with high electron affinity between the Ti top electrode and the ZrO2 layer and modulating the potential profiles at the WO3/ZrO2 interface. In addition, multilevel operation can be achieved by adjusting the magnitudes of set/ reset voltages.

Original languageEnglish
Article number7100861
Pages (from-to)675-677
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 1 Jul 2015


  • Electron affinity
  • homogeneous switching
  • resistive switching memory (RRAM)

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