Resistive switching characteristics of Tm 2O 3, Yb 2O 3, and Lu 2O 3-based metal-insulator-metal memory devices

Tung Ming Pan*, Chih Hung Lu, Somnath Mondal, Fu-Hsiang Ko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE 2O 3 /TaN (rareearth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE 2O 3 -based memory devices in the low-resistance state is ohmic emission, whereas Tm 2O 3, Yb 2 O 3, and Lu 2 O 3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu 2O 3 /TaN device showed a high-resistance ratio of ∼10 4 , a high device yield of∼70%, a good data retention as long as 10 5 s measured at 85 °C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu 2O 3 film. All of these results suggest that Ru/Lu 2O 3 /TaN structure memory is a good candidate for future nonvolatile RS memory applications.

Original languageEnglish
Article number6276260
Pages (from-to)1040-1046
Number of pages7
JournalIEEE Transactions on Nanotechnology
Volume11
Issue number5
DOIs
StatePublished - 17 Sep 2012

Keywords

  • Lu O
  • rare-earth (RE)
  • resistive switching (RS)
  • Tm O
  • Yb O

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