Resistive switching characteristics of nickel silicide layer embedded HfO 2 film

Debashis Panda; Chun Yang Huang; Tseung-Yuen Tseng

doi:10.1063/1.3694045

Resistive switching characteristics of nickel silicide layer embedded HfO ₂ film

Debashis Panda, Chun Yang Huang, Tseung-Yuen Tseng^*

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

Resistive switching behavior of the Ti/HfO ₂:NiSi:HfO ₂/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion from the electrodes and silicide layer on high-k film. Cross-sectional transmission electron microscopic micrographs revealed the thicknesses of the HfO ₂ and silicide layer. Significant decrease of forming voltage is observed for the 550 C, 1 min annealed device embedded with nickel silicide (NiSi) layers. Entire device shows bipolar switching properties with very low set/reset voltage. The optimized annealed device with NiSi embedded layer exhibits improved memory performances such as good on/off ratio (>10 ²), long retention more than 10 ⁴s, and reasonable endurance (>10 ³ cycles). A conducting filament model based on two stacks structure is employed to well explain the switching behaviors.

Original language	English
Article number	112901
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3694045
State	Published - 12 Mar 2012

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title = "Resistive switching characteristics of nickel silicide layer embedded HfO 2 film",

abstract = "Resistive switching behavior of the Ti/HfO 2:NiSi:HfO 2/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion from the electrodes and silicide layer on high-k film. Cross-sectional transmission electron microscopic micrographs revealed the thicknesses of the HfO 2 and silicide layer. Significant decrease of forming voltage is observed for the 550 C, 1 min annealed device embedded with nickel silicide (NiSi) layers. Entire device shows bipolar switching properties with very low set/reset voltage. The optimized annealed device with NiSi embedded layer exhibits improved memory performances such as good on/off ratio (>10 2), long retention more than 10 4s, and reasonable endurance (>10 3 cycles). A conducting filament model based on two stacks structure is employed to well explain the switching behaviors.",

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AB - Resistive switching behavior of the Ti/HfO 2:NiSi:HfO 2/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion from the electrodes and silicide layer on high-k film. Cross-sectional transmission electron microscopic micrographs revealed the thicknesses of the HfO 2 and silicide layer. Significant decrease of forming voltage is observed for the 550 C, 1 min annealed device embedded with nickel silicide (NiSi) layers. Entire device shows bipolar switching properties with very low set/reset voltage. The optimized annealed device with NiSi embedded layer exhibits improved memory performances such as good on/off ratio (>10 2), long retention more than 10 4s, and reasonable endurance (>10 3 cycles). A conducting filament model based on two stacks structure is employed to well explain the switching behaviors.

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