Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film

Wen Hsien Tzeng, Chia Wen Zhong, Kou Chen Liu*, Kow-Ming Chang, Horng-Chih Lin, Yi Chun Chan, Chun Chih Kuo, Feng Yu Tsai, Ming Hong Tseng, Pang Shiu Chen, Heng Yuan Lee, Frederick Chen, Ming Jinn Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.

Original languageEnglish
Pages (from-to)3415-3418
Number of pages4
JournalThin Solid Films
Volume520
Issue number8
DOIs
StatePublished - 1 Feb 2012

Keywords

  • Multilayer
  • Resistive memory
  • RRAM
  • Stacked oxide

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    Tzeng, W. H., Zhong, C. W., Liu, K. C., Chang, K-M., Lin, H-C., Chan, Y. C., Kuo, C. C., Tsai, F. Y., Tseng, M. H., Chen, P. S., Lee, H. Y., Chen, F., & Tsai, M. J. (2012). Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film. Thin Solid Films, 520(8), 3415-3418. https://doi.org/10.1016/j.tsf.2011.10.118