A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.
- Resistive memory
- Stacked oxide