Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film

Wen Hsien Tzeng; Chia Wen Zhong; Kou Chen Liu; Kow-Ming Chang; Horng-Chih Lin; Yi Chun Chan; Chun Chih Kuo; Feng Yu Tsai; Ming Hong Tseng; Pang Shiu Chen; Heng Yuan Lee; Frederick Chen; Ming Jinn Tsai

doi:10.1016/j.tsf.2011.10.118

Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film

Wen Hsien Tzeng, Chia Wen Zhong, Kou Chen Liu^*, Kow-Ming Chang, Horng-Chih Lin, Yi Chun Chan, Chun Chih Kuo, Feng Yu Tsai, Ming Hong Tseng, Pang Shiu Chen, Heng Yuan Lee, Frederick Chen, Ming Jinn Tsai

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

5 Scopus citations

Abstract

A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO ₂ /Al ₂ O ₃ /.../HfO ₂ /Al ₂ O ₃ /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.

Original language	English
Pages (from-to)	3415-3418
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.118
State	Published - 1 Feb 2012

Keywords

Multilayer
Resistive memory
RRAM
Stacked oxide

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10.1016/j.tsf.2011.10.118

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Tzeng, W. H., Zhong, C. W., Liu, K. C., Chang, K-M., Lin, H-C., Chan, Y. C., Kuo, C. C., Tsai, F. Y., Tseng, M. H., Chen, P. S., Lee, H. Y., Chen, F., & Tsai, M. J. (2012). Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film. Thin Solid Films, 520(8), 3415-3418. https://doi.org/10.1016/j.tsf.2011.10.118

Tzeng, Wen Hsien ; Zhong, Chia Wen ; Liu, Kou Chen ; Chang, Kow-Ming ; Lin, Horng-Chih ; Chan, Yi Chun ; Kuo, Chun Chih ; Tsai, Feng Yu ; Tseng, Ming Hong ; Chen, Pang Shiu ; Lee, Heng Yuan ; Chen, Frederick ; Tsai, Ming Jinn. / Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film. In: Thin Solid Films. 2012 ; Vol. 520, No. 8. pp. 3415-3418.

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abstract = " A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.",

keywords = "Multilayer, Resistive memory, RRAM, Stacked oxide",

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Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film. / Tzeng, Wen Hsien; Zhong, Chia Wen; Liu, Kou Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi Chun; Kuo, Chun Chih; Tsai, Feng Yu; Tseng, Ming Hong; Chen, Pang Shiu; Lee, Heng Yuan; Chen, Frederick; Tsai, Ming Jinn.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3415-3418.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film

AU - Tzeng, Wen Hsien

AU - Zhong, Chia Wen

AU - Liu, Kou Chen

AU - Chang, Kow-Ming

AU - Lin, Horng-Chih

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

AU - Tsai, Feng Yu

AU - Tseng, Ming Hong

AU - Chen, Pang Shiu

AU - Lee, Heng Yuan

AU - Chen, Frederick

AU - Tsai, Ming Jinn

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AB - A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.

KW - Multilayer

KW - Resistive memory

KW - RRAM

KW - Stacked oxide

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