Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film

Wen Hsien Tzeng; Chia Wen Zhong; Kou Chen Liu; Kow-Ming Chang; Horng-Chih Lin; Yi Chun Chan; Chun Chih Kuo; Feng Yu Tsai; Ming Hong Tseng; Pang Shiu Chen; Heng Yuan Lee; Frederick Chen; Ming Jinn Tsai

doi:10.1016/j.tsf.2011.10.118

Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film

Wen Hsien Tzeng, Chia Wen Zhong, Kou Chen Liu^*, Kow-Ming Chang, Horng-Chih Lin, Yi Chun Chan, Chun Chih Kuo, Feng Yu Tsai, Ming Hong Tseng, Pang Shiu Chen, Heng Yuan Lee, Frederick Chen, Ming Jinn Tsai

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO ₂ /Al ₂ O ₃ /.../HfO ₂ /Al ₂ O ₃ /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.

Original language	English
Pages (from-to)	3415-3418
Number of pages	4
Journal	Thin Solid Films
Volume	520
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.118
State	Published - 1 Feb 2012

Keywords

Multilayer
Resistive memory
RRAM
Stacked oxide

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Tzeng, Wen Hsien ; Zhong, Chia Wen ; Liu, Kou Chen ; Chang, Kow-Ming ; Lin, Horng-Chih ; Chan, Yi Chun ; Kuo, Chun Chih ; Tsai, Feng Yu ; Tseng, Ming Hong ; Chen, Pang Shiu ; Lee, Heng Yuan ; Chen, Frederick ; Tsai, Ming Jinn. / Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film. In: Thin Solid Films. 2012 ; Vol. 520, No. 8. pp. 3415-3418.

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title = "Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film",

abstract = " A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.",

keywords = "Multilayer, Resistive memory, RRAM, Stacked oxide",

author = "Tzeng, {Wen Hsien} and Zhong, {Chia Wen} and Liu, {Kou Chen} and Kow-Ming Chang and Horng-Chih Lin and Chan, {Yi Chun} and Kuo, {Chun Chih} and Tsai, {Feng Yu} and Tseng, {Ming Hong} and Chen, {Pang Shiu} and Lee, {Heng Yuan} and Frederick Chen and Tsai, {Ming Jinn}",

year = "2012",

month = feb,

day = "1",

doi = "10.1016/j.tsf.2011.10.118",

language = "English",

volume = "520",

pages = "3415--3418",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "8",

}

Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film. / Tzeng, Wen Hsien; Zhong, Chia Wen; Liu, Kou Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi Chun; Kuo, Chun Chih; Tsai, Feng Yu; Tseng, Ming Hong; Chen, Pang Shiu; Lee, Heng Yuan; Chen, Frederick; Tsai, Ming Jinn.

In: Thin Solid Films, Vol. 520, No. 8, 01.02.2012, p. 3415-3418.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Resistive switching characteristics of multilayered (HfO 2 /Al 2 O 3 ) n n = 19 thin film

AU - Tzeng, Wen Hsien

AU - Zhong, Chia Wen

AU - Liu, Kou Chen

AU - Chang, Kow-Ming

AU - Lin, Horng-Chih

AU - Chan, Yi Chun

AU - Kuo, Chun Chih

AU - Tsai, Feng Yu

AU - Tseng, Ming Hong

AU - Chen, Pang Shiu

AU - Lee, Heng Yuan

AU - Chen, Frederick

AU - Tsai, Ming Jinn

PY - 2012/2/1

Y1 - 2012/2/1

N2 - A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.

AB - A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.

KW - Multilayer

KW - Resistive memory

KW - RRAM

KW - Stacked oxide

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U2 - 10.1016/j.tsf.2011.10.118

DO - 10.1016/j.tsf.2011.10.118

M3 - Article

AN - SCOPUS:84857047568

VL - 520

SP - 3415

EP - 3418

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 8

ER -

Resistive switching characteristics of multilayered (HfO ₂ /Al ₂ O ₃ ) _n n = 19 thin film

Abstract

Keywords

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