Abstract
A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO 2 /Al 2 O 3 /.../HfO 2 /Al 2 O 3 /ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons.
Original language | English |
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Pages (from-to) | 3415-3418 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 520 |
Issue number | 8 |
DOIs | |
State | Published - 1 Feb 2012 |
Keywords
- Multilayer
- Resistive memory
- RRAM
- Stacked oxide