Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structures

C. Dou*, K. Mukai, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.

Original languageEnglish
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Pages597-603
Number of pages7
Edition4
DOIs
StatePublished - 2011
EventSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number4
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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