Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabrication

Hong Yu Chen*, Stefano Brivio, Che Chia Chang, Jacopo Frascaroli, Tuo-Hung Hou, Boris Hudec, Ming Liu, Hangbing Lv, Gabriel Molas, Joon Sohn, Sabina Spiga, V. Mani Teja, Elisa Vianello, H. S.Philip Wong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

Emerging non-volatile memory technologies are promising due to their anticipated capacity benefits, non-volatility, and zero idle energy. One of the most promising candidates is resistive random access memory (RRAM) based on resistive switching (RS). This paper reviews the development of RS device technology including the fundamental physics, material engineering, three-dimension (3D) integration, and bottom-up fabrication. The device operation, physical mechanisms for resistive switching, reliability metrics, and memory cell selector candidates are summarized from the recent advancement in both industry and academia. Options for 3D memory array architectures are presented for the mass storage application. Finally, the potential application of bottom-up fabrication approaches for effective manufacturing is introduced.

Original languageEnglish
Pages (from-to)21-38
Number of pages18
JournalJournal of Electroceramics
Volume39
Issue number1-4
DOIs
StatePublished - 1 Dec 2017

Keywords

  • 3D integration
  • Bottom-up fabrication
  • Resistive random access memory (RRAM)
  • Resistive switching device
  • Selector

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