Resistance increase in metal nano-wires

Hsueh Chung Chen*, Hsien Wei Chen, Shin Puu Jeng, Chii Ming M. Wu, Jack Y.C. Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

As the dimension of copper interconnect scales into the nano-meter regime, the resistivity of copper rapidly increases, primarily due to an electron scattering effect and other dimensional dependent factors, such as film quality. In this paper, we attempt to use a simplified parameter, dimension impact factor (DIP), which includes both surface and grain boundary scattering, to characterize the dimensional dependency of metal resistivity. Among the metal studied, silver has the largest DIP while aluminum has the lowest value. The chief reason is that aluminum has a short electron mean free path (MFP), meaning that it tends to be less affected by dimensional scaling, and has a higher electron specular ratio. In addition to the factor of MFP, resistivity can be affected by other dimensional dependent factors, such as film quality.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages129-130
Number of pages2
DOIs
StatePublished - 2006
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 24 Apr 200626 Apr 2006

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period24/04/0626/04/06

Fingerprint Dive into the research topics of 'Resistance increase in metal nano-wires'. Together they form a unique fingerprint.

  • Cite this

    Chen, H. C., Chen, H. W., Jeng, S. P., Wu, C. M. M., & Sun, J. Y. C. (2006). Resistance increase in metal nano-wires. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 129-130). [4016633] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251097