Resist-related damage on ultrathin gate oxide during plasma ashing

Chao-Hsin Chien*, Chun Yen Chang, Horng-Chih Lin, Tsai Fu Chang, Shean Guang Chiou, Liang Po Chen, Tiao Yuan Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

This paper presents an important observation of plasma-induced damage on ultrathin oxides during O2 plasma ashing by metal "antenna" structures with photoresist on top of the electrodes. It is found that for MOS capacitors without overlying photoresist during plasma ashing, only minor damage occurs on thin oxides, even for oxide thickness down to 4.2 nm and an area ratio as large as 104. In contrast, oxides thinner than 6 nm with resist overlayer suffer significant degradation from plasma charging. This phenomenon is contrary to most previous reports. It suggests that the presence of photoresist will substantially affect the plasma charging during ashing process, especially for devices with ultrathin gate oxides.

Original languageEnglish
Pages (from-to)33-35
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number2
DOIs
StatePublished - 1 Feb 1997

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