ReRAM-based 4T2R nonvolatile TCAM with 7x NVM-stress reduction, and 4x improvement in speed-wordlength-capacity for normally-off instant-on filter-based search engines used in big-data processing

Li Yue Huang, Meng Fan Chang, Ching Hao Chuang, Chia Chen Kuo, Chien Fu Chen, Geng Hau Yang, Hsiang Jen Tsai, Tien-Fu Chen, Shyh Shyuan Sheu, Keng Li Su, Frederick T. Chen, Tzu Kun Ku, Ming Jinn Tsai, Ming Jer Kao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

39 Scopus citations

Abstract

This study proposes an RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) to 1) suppress match-line (ML) leakage current from match cells (IML-M), 2) reduce ML parasitic load (CML), 3) decouple NVM-stress from wordlength (WDL) and IML-MIS. RCSD reduces NVM-stress by 7+x, and achieves a 4+x improvement in speed-WDL-capacity-product. A 128×32b RCSD nvTCAM macro was fabricated using HfO ReRAM and an 180nm CMOS. This paper presents the first ReRAM-based nvTCAM featuring the shortest (1.2ns) search delay (TSD) among nvTCAMs with WDL≧32b.

Original languageEnglish
Title of host publication2014 Symposium on VLSI Circuits, VLSIC 2014 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479933273
DOIs
StatePublished - 1 Jan 2014
Event28th IEEE Symposium on VLSI Circuits, VLSIC 2014 - Honolulu, HI, United States
Duration: 10 Jun 201413 Jun 2014

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Conference

Conference28th IEEE Symposium on VLSI Circuits, VLSIC 2014
CountryUnited States
CityHonolulu, HI
Period10/06/1413/06/14

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