Reproducible resistive switching behavior in sputtered CeO 2 polycrystalline films

Chih Yang Lin, Dai Ying Lee, Sheng Yi Wang, Chun Chieh Lin, Tseung-Yuen Tseng*

*Corresponding author for this work

Research output: Contribution to journalArticle

51 Scopus citations

Abstract

Sputter-deposited CeO 2 film in the metal-insulator-metal structure exhibits repeatable resistive switching behavior under voltage sweep. Based on the X-ray diffraction patterns and the cross-sectional scanning electron microscope image, the CeO 2 film is polycrystalline with columnar grains perpendicular to the bottom electrode. Moreover, due to the symmetric device structure of Pt/CeO 2 /Pt, the resistive switching behavior is independent of bias polarity so that both positive and negative voltages can switch the device from high conducting state (ON-state) into low conducting state (OFF-state) and then back to ON-state, which is named non-polar resistive switching. The resistance ratio between two memory states is about five orders of magnitude, which is stable over 10 4  s at 0.3 V stress. In addition, the resistance ratio decreases with increasing the current compliance during forming process. The stability of ON-state, OFF-state, and as-deposited film state (the state before performing forming process) against temperature is also investigated in this study, showing that the OFF-state is less stable.

Original languageEnglish
Pages (from-to)480-483
Number of pages4
JournalSurface and Coatings Technology
Volume203
Issue number5-7
DOIs
StatePublished - 25 Dec 2008

Keywords

  • CeO
  • Nonvolatile memory
  • Resistive switching
  • RRAM

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