Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure

Li Wei Feng, Yao Feng Chang, Chun-Yen Chang, Ting Chang Chang, Shin Yuan Wang, Pei-Wei Chiang, Chao Cheng Lin, Shih Ching Chen, Shih Cheng Chen

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Abstract

In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1536-1539
Number of pages4
JournalThin Solid Films
Volume519
Issue number5
DOIs
StatePublished - 30 Dec 2010

Keywords

  • Resistance switching; FeOx
  • NONVOLATILE MEMORY; FILMS

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    Feng, L. W., Chang, Y. F., Chang, C-Y., Chang, T. C., Wang, S. Y., Chiang, P-W., Lin, C. C., Chen, S. C., & Chen, S. C. (2010). Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure. Thin Solid Films, 519(5), 1536-1539. https://doi.org/10.1016/j.tsf.2010.08.165