Renovation of power devices by GaN-based materials

Daisuke Ueda

doi:10.1109/IEDM.2015.7409711

Renovation of power devices by GaN-based materials

Daisuke Ueda^*

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.

Original language	English
Title of host publication	2015 IEEE International Electron Devices Meeting, IEDM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	16.4.1-16.4.4
ISBN (Electronic)	9781467398930
DOIs	https://doi.org/10.1109/IEDM.2015.7409711
State	Published - 16 Feb 2015
Event	61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States Duration: 7 Dec 2015 → 9 Dec 2015

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2016-February
ISSN (Print)	0163-1918

Conference

Conference	61st IEEE International Electron Devices Meeting, IEDM 2015
Country	United States
City	Washington
Period	7/12/15 → 9/12/15

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10.1109/IEDM.2015.7409711

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title = "Renovation of power devices by GaN-based materials",

abstract = "Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.",

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year = "2015",

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doi = "10.1109/IEDM.2015.7409711",

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series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2015 IEEE International Electron Devices Meeting, IEDM 2015",

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note = "null ; Conference date: 07-12-2015 Through 09-12-2015",

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Ueda, D 2015, Renovation of power devices by GaN-based materials. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409711, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 16.4.1-16.4.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 7/12/15. https://doi.org/10.1109/IEDM.2015.7409711

Renovation of power devices by GaN-based materials. / Ueda, Daisuke.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 16.4.1-16.4.4 7409711 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.

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Renovation of power devices by GaN-based materials

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