Renovation of power devices by GaN-based materials

Daisuke Ueda*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

Attention has been paid to power electronics to make energy-saving society. Though the wide bandgap semiconductors are expected to realize efficient power converters by replacing Si ones, it will be beneficial to look back their evolution paths. Si power devices have been changing their structures to adapt to the wide range of requirements such as, blocking-voltage, handling-current, and switching-speed. In this paper, some perspectives of the device-design for GaN-based power transistors are introduced depending on the three different application layers.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.4.1-16.4.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - 16 Feb 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 7 Dec 20159 Dec 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

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