Remote charge scattering in MOSFETs with ultra-thin gate dielectrics

Mahesh S. Krishnan*, Yee Chia Yeo, Qiang Lu, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference article

37 Scopus citations

Abstract

In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20-30% reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 angstroms.

Original languageEnglish
Pages (from-to)571-574
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1 Dec 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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