In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20-30% reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 angstroms.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 1998|
|Event||Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 6 Dec 1998 → 9 Dec 1998